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TK62J60W,S1VQ

Toshiba Semiconductor and Storage

Product No:

TK62J60W,S1VQ

Package:

TO-3P(N)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 61.8A TO3P

Quantity:

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TK62J60W,S1VQ - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 3.1mA
Base Product Number TK62J60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 38mOhm @ 30.9A, 10V
Power Dissipation (Max) 400W (Tc)
Supplier Device Package TO-3P(N)
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)