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TK13E25D,S1X(S

Toshiba Semiconductor and Storage

Product No:

TK13E25D,S1X(S

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 250V 13A TO220-3

Quantity:

Delivery:

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TK13E25D,S1X(S - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1mA
Base Product Number TK13E25
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 250mOhm @ 6.5A, 10V
Power Dissipation (Max) 102W (Tc)
Supplier Device Package TO-220-3
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 250 V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)