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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SISC06DN-T1-GE3
Vishay Siliconix
Product No:
SISC06DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8
Batch:
-
Datasheet:
Description:
MOSFET N-CH 30V 27.6A/40A PPAK
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
SISC06DN-T1-GE3 - Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Base Product Number | SISC06 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 15A, 10V |
| Power Dissipation (Max) | 3.7W (Ta), 46.3W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2455 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 27.6A (Ta), 40A (Tc) |
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