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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIGC109T120R3
Infineon Technologies
Product No:
SIGC109T120R3
Manufacturer:
Package:
Die
Batch:
-
Datasheet:
-
Description:
INSULATED GATE BIPOLAR TRANSISTO
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
SIGC109T120R3 - Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | - |
| Package | Bulk |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Product Status | Active |
| Test Condition | - |
| Switching Energy | - |
| Base Product Number | SIGC109 |
| Td (on/off) @ 25°C | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | Die |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| Current - Collector Pulsed (Icm) | 300 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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