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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
K4B4G1646E-BYK000
Samsung Semiconductor, Inc.
Product No:
K4B4G1646E-BYK000
Manufacturer:
Package:
-
Batch:
-
Datasheet:
-
Description:
DDR3-1600 4GB (256MX16)1.25NS CL
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
K4B4G1646E-BYK000 - Product Information
Parameter Info
User Guide
| Mfr | Samsung Semiconductor, Inc. |
| Series | - |
| Package | Tray |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Product Status | Active |
| Clock Frequency | 800 MHz |
| Memory Interface | Parallel |
| Voltage - Supply | 1.35V |
| Memory Organization | 256M x 16 |
| DigiKey Programmable | Not Verified |
| Operating Temperature | 0°C ~ 95°C |
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