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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPB051NE8NGATMA1
Infineon Technologies
Product No:
IPB051NE8NGATMA1
Manufacturer:
Package:
PG-TO263-3-2
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
IPB051NE8NGATMA1 - Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | OptiMOS™2 |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 100A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Supplier Device Package | PG-TO263-3-2 |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 85 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12100 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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