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HN1C03FU-B,LF

Toshiba Semiconductor and Storage

Product No:

HN1C03FU-B,LF

Package:

US6

Batch:

-

Datasheet:

-

Description:

NPN + NPN IND. TRANSISTOR VCEO20

Quantity:

Delivery:

Payment:

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HN1C03FU-B,LF - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Product Status Active
Transistor Type 2 NPN (Dual)
Base Product Number HN1C03
Operating Temperature 150°C (TJ)
Frequency - Transition 30MHz
Supplier Device Package US6
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30A
Current - Collector (Ic) (Max) 300mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 4mA, 2V
Voltage - Collector Emitter Breakdown (Max) 20V