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GT50N322A

Toshiba Semiconductor and Storage

Product No:

GT50N322A

Package:

TO-3P(N)

Batch:

-

Datasheet:

-

Description:

PB-F IGBT / TRANSISTOR TO-3PN IC

Quantity:

Delivery:

Payment:

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GT50N322A - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tray
IGBT Type -
Input Type Standard
Power - Max 156 W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Test Condition -
Switching Energy -
Td (on/off) @ 25°C -
Operating Temperature 150°C (TJ)
Supplier Device Package TO-3P(N)
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Reverse Recovery Time (trr) 800 ns
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 120 A
Voltage - Collector Emitter Breakdown (Max) 1000 V