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TK3R9E10PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK3R9E10PL,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

Payment:

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TK3R9E10PL,S1X - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number TK3R9E10
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V
Power Dissipation (Max) 230W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 6320 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)