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TK3A90E,S4X

Toshiba Semiconductor and Storage

Product No:

TK3A90E,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR TO-

Quantity:

Delivery:

Payment:

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TK3A90E,S4X - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 4.6Ohm @ 1.3A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 900 V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)