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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TK32E12N1,S1X
Toshiba Semiconductor and Storage
Product No:
TK32E12N1,S1X
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
MOSFET N CH 120V 60A TO-220
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
TK32E12N1,S1X - Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Base Product Number | TK32E12 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 16A, 10V |
| Power Dissipation (Max) | 98W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
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