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SSM6J412TU,LF

Toshiba Semiconductor and Storage

Product No:

SSM6J412TU,LF

Package:

UF6

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 20V 4A UF6

Quantity:

Delivery:

Payment:

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SSM6J412TU,LF - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Base Product Number SSM6J412
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max) 1W (Ta)
Supplier Device Package UF6
Gate Charge (Qg) (Max) @ Vgs 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)