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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SSM6J216FE,LF
Toshiba Semiconductor and Storage
Product No:
SSM6J216FE,LF
Manufacturer:
Package:
ES6
Batch:
-
Datasheet:
-
Description:
MOSFET P-CHANNEL 12V 4.8A ES6
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
SSM6J216FE,LF - Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Base Product Number | SSM6J216 |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 3.5A, 4.5V |
| Power Dissipation (Max) | 700mW (Ta) |
| Supplier Device Package | ES6 |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
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