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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NTHL080N120SC1
onsemi
Product No:
NTHL080N120SC1
Manufacturer:
Package:
TO-247-3
Batch:
-
Datasheet:
Description:
SILICON CARBIDE MOSFET, N-CHANNE
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
NTHL080N120SC1 - Product Information
Parameter Info
User Guide
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | +25V, -15V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| Power Dissipation (Max) | 348W (Tc) |
| Supplier Device Package | TO-247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
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