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NDD02N60Z-1G

onsemi

Product No:

NDD02N60Z-1G

Manufacturer:

onsemi

Package:

I-PAK

Batch:

-

Datasheet:

Description:

MOSFET N-CH 600V 2.2A IPAK

Quantity:

Delivery:

Payment:

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NDD02N60Z-1G - Product Information

Parameter Info

User Guide

Mfr onsemi
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Obsolete
Vgs(th) (Max) @ Id 4.5V @ 50µA
Base Product Number NDD02
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1A, 10V
Power Dissipation (Max) 57W (Tc)
Supplier Device Package I-PAK
Gate Charge (Qg) (Max) @ Vgs 10.1 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 274 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)