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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
GAN3R2-100CBEAZ
NEXPERIA
Product No:
GAN3R2-100CBEAZ
Manufacturer:
Package:
8-WLCSP (3.5x2.13)
Batch:
-
Datasheet:
Description:
100 V, 3.2 MOHM GALLIUM NITRIDE
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
GAN3R2-100CBEAZ - Product Information
Parameter Info
User Guide
| Mfr | Nexperia USA Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-XFBGA, WLCSP |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Base Product Number | GAN3R2 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 5V |
| Power Dissipation (Max) | 394W |
| Supplier Device Package | 8-WLCSP (3.5x2.13) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
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