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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
G3R350MT12J
GeneSiC Semiconductor
Product No:
G3R350MT12J
Manufacturer:
Package:
TO-263-7
Batch:
-
Datasheet:
Description:
SIC MOSFET N-CH 11A TO263-7
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
G3R350MT12J - Product Information
Parameter Info
User Guide
| Mfr | GeneSiC Semiconductor |
| Series | G3R™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±15V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.69V @ 2mA |
| Base Product Number | G3R350 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V |
| Power Dissipation (Max) | 75W (Tc) |
| Supplier Device Package | TO-263-7 |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
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